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parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 2.7 i d @ t a = 70c continuous drain current, v gs @ 4.5v 2.2 a i dm pulsed drain current 11 p d @t a = 25c power dissipation 0.96 p d @t a = 70c power dissipation 0.62 linear derating factor 7.7 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 1/13/03 parameter max. units r ja maximum junction-to-ambient 130 c/w thermal resistance absolute maximum ratings www.irf.com 1 IRF5852 hexfet power mosfet these n-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual tsop-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. with two die per package, the IRF5852 can provide the functionality of two sot-23 packages in a smaller footprint. its unique thermal design and r ds(on) reduction enables an increase in current-handling capability. description ultra low on-resistance dual n-channel mosfet surface mount available in tape & reel low gate charge pd - 93999a tsop-6 top view v dss r ds(on) max ( i d 20 v 0.090@v gs = 4.5v 2.7a 0.120@v gs = 2.5v 2.2a s2 g2 g1 3 2 1 4 5 6d 1 d 2 s 1
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 0.96a, v gs = 0v t rr reverse recovery time ??? 25 38 ns t j = 25c, i f = 0.96a q rr reverse recovery charge ??? 6.5 9.8 nc di/dt = 100a/s source-drain ratings and characteristics 11 0.96 repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on fr-4 board, t
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.016 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.090 v gs = 4.5v, i d = 2.7a ??? ??? 0.120 v gs = 2.5v, i d = 2.2a v gs(th) gate threshold voltage 0.60 ??? 1.25 v v ds = v gs , i d = 250a g fs forward transconductance 5.2 ??? ??? s v ds = 10v, i d = 2.7a ??? ??? 1.0 v ds = 16v, v gs = 0v ??? ??? 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? 100 v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v q g total gate charge ??? 4.0 6.0 i d = 2.7a q gs gate-to-source charge ??? 0.95 ??? nc v ds = 16v q gd gate-to-drain ("miller") charge ??? 0.88 ??? v gs = 4.5v t d(on) turn-on delay time ??? 6.6 ??? v dd = 10v t r rise time ??? 1.2 ??? i d = 1.0a t d(off) turn-off delay time ??? 15 ??? r g = 6.2 ? t f fall time ??? 2.4 ??? v gs = 4.5v c iss input capacitance ??? 400 ??? v gs = 0v c oss output capacitance ??? 48 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 32 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current s d g
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 0.1 1 10 100 1.5 2.0 2.5 3.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 2.7a fig 4. normalized on-resistance vs. temperature
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 100 200 300 400 500 600 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.7a v = 10v ds v = 16v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + -
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs, gate -to -source voltage (v) 0.06 0.08 0.10 0.12 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 2.7a fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 024681012 i d , drain current (a) 0.00 0.10 0.20 0.30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v v gs = 2.5v
www.irf.com 7 fig 14. threshold voltage vs. tempera- ture typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.6 0.8 1.0 1.2 v g s ( t h ) , v a r i a c e ( v ) i d = 250a 0.001 0.010 0.100 1.000 10.000 time (sec) 0 4 8 12 16 20 24 p o w e r ( w )
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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/03
ww = (1-26) if pre ce de d by last digit of calendar ye ar 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 2004 4 x 1999 0 ww = (27-52) if preceded by a letter we e k 27 28 29 30 50 w year a 2001 a b 2002 b c 2003 c d 2004 d x j 2005 1996 1997 1998 1999 2000 e f g h k y 2005 1996 1997 1998 2000 9 8 7 6 5 part numbe r top work we e k work 3a = s i3443dv part number code reference: 25 y 51 y 26 z 3b = ir f 5800 3c = irf 5850 3d = irf 5851 3e = irf 5852 3j = ir f 5806 3i = ir f5805 dat e code date code examples: yww = 9603 = 6c yww = 9632 = f f waf e r l ot numb e r code bottom example : t his is an s i3443dv notes : t his part marking information applies to devices produced before 02/26/2001 50 51 30 27 28 29 we e k wor k w = (27-52) if pre ce ded b y a le t t e r 25 26 24 03 02 04 we e k wor k 01 w = (1-26) if pre ce de d by last digit of calendar year part number code reference: l = irf5804 m = irf 5803 n = irf 5820 c = irf 5850 j = irf 5806 k = irf 5810 e = IRF5852 d = irf 5851 i = irf5805 b = irf 5800 a = s i3443dv h 1998 2000 1999 k j b 2002 2005 1996 1997 2003 2004 e f g c d 2001 ye ar a y part number top 2001 1 y = year code lot w = we e k 7 1997 2000 1999 1998 0 9 8 2004 2005 1996 2002 2003 4 6 5 2 3 ye ar y y x b c d a w a x z y d b c w notes : t his part marking information applies to devices produced after 02/26/2001
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